參數(shù)資料
型號: MRFIC0913
廠商: MOTOROLA INC
元件分類: 衰減器
英文描述: 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
中文描述: 880 MHz - 915 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
文件頁數(shù): 1/8頁
文件大?。?/td> 140K
代理商: MRFIC0913
1
MRFIC0913
MOTOROLA RF DEVICE DATA
The MRFIC Line
# !!
"
This integrated circuit is intended for GSM class IV handsets. The device is
specified for 2.8 watts output power and 48% minimum power added efficiency
under GSM signal conditions at 4.8 Volt supply voltage. To achieve this superior
performance, Motorola’s planar GaAs MESFET process is employed. The
device is packaged in the PFP–16 Power Flat Package which gives excellent
thermal performance through a solderable backside contact.
Usable Frequency Range 800 to 1000 MHz
Typical Output Power:
36.0 dBm @ 5.8 Volts
35.0 dBm @ 4.8 Volts
31.5 dBm @ 3.6 Volts
48% Minimum Power Added Efficiency
Low Parasitic, High Thermal Dissipation Package
Order MRFIC0913R2 for Tape and Reel Option.
R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Device Marking = M0913
ABSOLUTE MAXIMUM RATINGS
(TA = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Supply Voltage
VD1, VD2
Pin
VSS
TA
Tstg
R
θ
JC
9
Vdc
RF Input Power
15
dBm
Gate Voltage
–6
Vdc
Ambient Operating Temperature
–40 to +85
°
C
Storage Temperature
–65 to +150
°
C
Thermal Resistance, Junction to Case
10
°
C/W
Pin Connections and Functional Block Diagram
RF IN
1
2
3
4
7
6
5
GND
8
9
10
11
12
13
14
15
16
VG1
RF OUT
RF OUT
VD1
VD2
GND
GND
N/C
N/C
VSS
VG2
GND
GND
GND
Order this document
by MRFIC0913/D
SEMICONDUCTOR TECHNICAL DATA
Motorola, Inc. 1996
900 MHz
GSM CELLULAR
INTEGRATED POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 978–02
(PFP–16)
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