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參數(shù)資料
| 型號： | MRFIC0913 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 衰減器 |
| 英文描述： | 900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| 中文描述： | 880 MHz - 915 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 140K |
| 代理商： | MRFIC0913 |
3
MRFIC0913
MOTOROLA RF DEVICE DATA
C2
T1
C3
RF
OUT
C5
C6
R1
C8
L1
R3
R4
C9 C10
RF IN
L2
C1
1
2
3
4
7
6
5
8
9
10
11
12
13
14
15
16
Figure 2. GSM Application Circuit Configuration with Drain Switch
and MC33169 GaAs Power Amplifier Support IC
1
2
3
4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
5
6
7
8
D
G
S
D
D
D
S
VRAMP
4.8 V BATTERY
3 V
Q1
R5
R2
C15
C14
U1
CR1
C12
C13
STANDBY
C1
C2, C9
C3
C4, C5, C8 6.8 pF, 0603 NPO/COG
C6
33 nF
C7
220 nF
C10
33 pF, 0603 NPO/COG
C12 – C16 1
μ
F
33 pF, 0603 NPO/COG
33 nF
47 pF, 0603 NPO/COG
CR1
L1
L2
MMBD701LT1
8.2 nH, 0805 Toko
10 Turn MicroSpring,
Coilcraft 1606–10 (for
improved harmonic rejection
only)
MMSF4N01HD
330
Q1
R1
R2
R3
R4
R5
T1
U1
U2
BOARD MATERIAL Glass/Epoxy,
ε
r = 4.45
100
1.8 k
2.7 k
470
5 mm 30
Microstrip Line
MRFIC0913
MC33169 (–4 V Version)
C16
U2
0 V
3 V
0 V
C7
C4
Note: Use of a Schottky diode such as MMBD701LT1 for CR1 is mandatory below 3.6 V.
A general purpose silicon diode can be used above 3.6 V.
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參數(shù)描述 |
|---|---|
| MRFIC0914 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:900 MHz PAGING POWER AMPLIFIER Si MONOLITHIC INTEGRATED CIRCUIT |
| MRFIC0916 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER |
| MRFIC0917 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT |
| MRFIC0931 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:BALANCED TRANSMIT MIXER SILICON MONOLITHIC INTEGRATED CIRCUIT |
| MRFIC0970 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:3.2V GSM GaAs Intergrated Power Amplifier |
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