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參數(shù)資料
| 型號： | MSAER30N20A |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | SMALL SIGNAL, FET |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | MSAER30N20A |
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Current
SYMBOL
BV
DSS
CONDITIONS
MIN
200
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
D
= 250
μ
A
BV
DSS
/
T
J
0.29
V/
°
C
V
GS(th)
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=
±
20V
DC
, V
DS
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
DS
=0.8
BV
DSS
T
J
= 25
°
C
V
GS
= 0 V T
J
= 125
°
C
V
GS
= 10V, I
D
= 20A T
J
= 25
°
C
I
D
= 30A T
J
= 25
°
C
I
D
= 20A T
J
= 125
°
C
V
DS
≥
15 V; I
D
= 20 A
2.0
4.0
±
100
±
200
25
250
0.085
0.090
V
nA
I
GSS
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
I
DSS
μ
A
R
DS(on)
1.5
Forward Transconductance (1)
g
fs
9
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
C
iss
C
oss
C
rss
T
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3500
700
110
pF
V
GS
= 10 V, V
DS
= 100 V,
I
D
= 30 A, R
G
= 2.35
35
190
170
130
115
22
60
1.2
1.9
50
950
tbd
9
ns
V
GS
= 10 V, V
DS
= 100V, I
D
= 30A
55
8
30
nC
I
F
= I
S
, V
GS
= 0 V MSAE
MSAF
I
F
= 10 A, MSAE
-di/dt = 100 A/
μ
s, MSAF
I
F
= 10 A, MSAE
di/dt = 100 A/
μ
s, MSAF
V
Reverse Recovery Time (Body Diode)
t
rr
ns
Reverse Recovery Charge
Q
rr
μ
C
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
MSAER30N20A
MSAFR30N20A
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