參數(shù)資料
型號(hào)： MSAFZ33N20A
廠商： MICROSEMI CORP
元件分類： 功率晶體管
英文描述： LJT 39C 37#20 2#16 SKT PLUG
中文描述： 33 A, 200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： HERMETIC SEALED, POWER PACKAGE-3
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 48K
代理商： MSAFZ33N20A
MSAEZ33N20A
MSAFZ33N20A
200 Volts
33 Amps
70 m
Features
Ultrafast rectifier in parallel with the body diode (MSAE type only)
Rugged polysilicon gate cell structure
Increased Unclamped Inductive Switching (UIS) capability
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request
DESCRIPTION
SYMBOL
MAX.
UNIT
Drain-to-Source Breakdown Voltage (Gate Shorted to Source)
@ T
J
≥
25
°
C
Drain-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Source Voltage
Transient Gate-to-Source Voltage
Continuous Drain Current
Tj= 25
°
C
Tj=
100
°
C
Peak Drain Current, pulse width limited by T
Jmax
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Voltage Rate of Change of the Recovery Diode
@ I
S
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
, T
J
≤
150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Thermal Resistance, Junction to Case
BV
DSS
200
Volts
BV
DGR
V
GS
V
GSM
I
D25
I
D100
200
+/-20
+/-30
33
20
Volts
Volts
Volts
Amps
I
DM
I
AR
E
AR
E
AS
dv/dt
132
33
16
790
TBD
Amps
Amps
mJ
mJ
V/ns
P
D
T
j
T
stg
I
S
I
SM
θ
JC
300
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
33
132
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Datasheet# MSC0300A
Mechanical Outline
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
ENHANCEMENT MODE
POWER MOSFET
DRAIN
SOURCE
GATE
相關(guān)PDF資料
PDF描述
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