參數(shù)資料
型號： MSAEX8P50A
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 功率晶體管
英文描述： Circular Connector; No. of Contacts:13; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-13 RoHS Compliant: No
中文描述： 8 A, 500 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： HERMETIC SEALED, POWER PACKAGE-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 49K
代理商： MSAEX8P50A
DESCRIPTION
Drain-to-Source Breakdown Voltage
(Gate Shorted to Source)
Temperature Coefficient of the Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Temperature Coefficient of the Threshold Voltage
Gate-to-Source Leakage Current
SYMBOL
BV
DSS
CONDITIONS
MIN
500
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
D
= 250
μ
A
BV
DSS
/
T
J
0.054
%/
°
C
V
GS(th)
V
GSth
/
T
J
V
DS
= V
GS
, I
D
=250
μ
A
2.0
4.5
V
0.12
%/
°
C
nA
I
GSS
V
GS
=
±
20V
DC
, V
DS
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
DS
=0.8
BV
DSS
T
J
= 25
°
C
V
GS
= 0 V T
J
= 125
°
C
V
GS
= 10V, I
D
= 4 A T
J
= 25
°
C
I
D
= 4 A T
J
= 125
°
C
±
100
±
200
200
1000
1.2
Drain-to-Source Leakage Current (Zero Gate
Voltage Drain Current)
Static Drain-to-Source On-State Resistance (1)
I
DSS
μ
A
R
DS(on)
R
DSon
/
T
J
2.2
0.6
Temperature Coefficient of the Drain-to-Source
Resistance
Forward Transconductance (1)
%/
°
C
g
fs
V
DS
≥
10 V; I
D
= 8 A
4
5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Body Diode Forward Voltage (1)
C
iss
C
oss
C
rss
T
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
V
SD
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
3400
450
175
33
27
35
35
130
32
64
1.2
pF
V
GS
= 10 V, V
DS
= 250 V,
I
D
= 4 A, R
G
= 2.00
ns
V
GS
= 10 V, V
DS
= 250V, I
D
= 4 A
nC
I
F
= I
S
, V
GS
= 0 V
1.5
V
Reverse Recovery Time (Body Diode)
t
rr
I
F
= 10 A, 25 C
-di/dt = 100 A/
μ
s, 125 C
I
F
= 10 A, 25 C
di/dt = 100 A/
μ
s, 125 C
35
50
tbd
250
tbd
ns
Reverse Recovery Charge
Q
rr
125
μ
C
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) Microsemi Corp. does not manufacture the mosfet die; contact company for details.
MSAEX8P50A
Datasheet# MSC0307A
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