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參數(shù)資料
| 型號： | MSAFA1N100D |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No |
| 中文描述： | 1 A, 1000 V, 13.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DIE-2 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 78K |
| 代理商： | MSAFA1N100D |
MSC1054.PDF 6/23/99
All Ratings: Device Packaged in TO-3 or Microsemi CoolPack Package, T
C
= 25
°
C unless otherwise specified
MSAFA1N100D
Fast MOSFET Die for
Implantable Cardio Defibrillator
Applications
DYNAMIC CHARACTERISTICS:
x
Repetitive Rating: Pulse width limited by maximum junction temperature.
y
I
C
= I
C2,
V
CC
= 50V, R
CE
= 25
, L = 300
μ
H, T
J
= 25
°
C
z
T
J
= 150
°
C
{
See MIL-STD-750 Method 3471
DIE PROBE PARAMETERS (100% TESTS):
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
MIN
TYP
MAX
UNIT
C
iss
C
oss
Input Capacitance
V
GS
= 0V
V
DS
= 25V
290
350
pF
Output Capacitance
36
45
pF
C
rss
Qg
Reverse Transfer Capacitance
f = 1 MHz
15
25
pF
Total Gate Charge
{
Gate-Source Charge
V
GS
= 10V
V
DS
= 0.5BV
DSS
20
nC
Qgs
1
nC
Qgd
Gate-Drain ("Miller") Charge
Turn-on Delay Time
I
C
=
20 mA
10
6.3
nC
ns
t
d
(on)
Resistive Switching (25
°
C)
t
r
t
d
(off)
Rise Time
V
GS
= 10V, V
DS
= 0.5BV
DSS
I
D
= 20 mA
5.9
ns
Turn-off Delay Time
315
ns
t
f
t
d
(on)
t
r
t
d
(off)
t
f
V
SD
Fall Time
R
g
= 1.6
2.6
us
Turn-On Delay Time
Resistive Switching (25
°
C)
6.3
ns
Rise Time
V
GS
= 10V, V
DS
= 0.5BV
DSS
I
D
= 100 mA
R
g
= 1.6
V
GS
=0 V,
I
S
= 1 A
5.8
ns
Turn-off Delay Time
76
ns
Fall Time
470
ns
Diode Forward Voltage
1
V
trr
Reverse Recovery Time
I
S
= 1 A, d
I
S
/ dt = 100 A/us
130
ns
Q
rr
Reverse Recovery Charge
I
S
= 1 A, d
I
S
/ dt = 100 A/us
.7
uC
SYMBOL
CHARACTERISTIC / TEST CONDITIONS
MIN
TYP
MAX
UNIT
BV
DSS
V
GS
(TH)
R
DS
(ON)
I
DSS
I
GSS
Drain-Source Breakdown Voltage (V
GS
= 0V, I
C
= 0.25mA)
Gate Threshold Voltage (V
DS
= V
GS
, I
C
= 1000
μ
A, T
J
= 25
°
C
Drain-Source On-Resistance (V
GS
= 10V, I
C
= 1 A
,
T
J
= 25
°
C)
Zero Gate Voltage Drain Current (V
DS
= 800 V, V
GS
= 0V, T
J
= 25
°
C)
Gate-Source Leakage Current (V
GS
= ±20 V, V
DS
=0V)
1000
2
Volts
4.5
14
25
±100
ohm
uA
nA
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