參數(shù)資料
型號(hào)： MSAFA1N100P3
廠商： MICROSEMI CORP
元件分類： 功率晶體管
英文描述： N-Channel enhancement mode high density
中文描述： 1 A, 1000 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù)： 1/2頁
文件大?。?/td> 44K
代理商： MSAFA1N100P3
www.MICROSEMI.com
Santa Ana Division
Data Sheet #MSC
Updated: December 1999
2830 south Fairview Street, Santa A na, CA 92704 USA (714)979.8220 FA X (714)557.5989
MSAFA1N100P3
Maximum Ratings
Features
Low On-State resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra low Leakage Current
UIS rated
Available with Lot Acceptance Testing “L” Suffix
Available with “J” leads
Applications
Implantable Cardio Defibrillator
Testing and Screening
(per lot)
100% Testing at 25C, DC parameters
Sample Test (22/0), AC, Hot and Cold Parameters (min/max limits)
MOSFET Device
1 Amp
1000 V
N-Channel
enhancement mode high
density
Static Electrical Characteristics
SYMBOL
VDSS
VGS
ID1
ID2
IDM1
IAR
EAR
EAS
TJ, TSTG
PARAMETER
VALUE
1000
±20
1
0.8
4
1
TBD
TBD
-55 to 150
UNIT
Volts
Volts
Amps
Amps
Amps
Amps
mJ
mJ
C
Drain - Source Voltage
Gate - Source Voltage
Continuous Drain Current @ TC = 25
Continuous Drain Current @ TC = 100
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Operating and Storage: Junction Temperature Range
SYMBOL
BVDSS
VGS(TH)2
VGS(TH)1
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
RDS(ON)5
IDSS1
IDSS2
IDSS3
IGSS1
IGSS2
IGSS3
CHARACTERISTIC / TEST CONDITIONS
Drain - Source Breakdown Voltage (VGS = 0V, ID = 0.25mA)
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 37C)
Gate Threshold Voltage (VGS= VDS, ID = 1 mA, TJ = 25C)
Drain – Source On-State Resistance (VGS = 10V, ID = ID1, TJ = 25C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 37C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 25C)
Drain – Source On-State Resistance (VGS = 7V, ID = 5…150 mA, TJ= 60C)
Drain – Source On-State Resistance (VGS = 7V, ID = ID1, TJ = 125C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 25C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 37C)
Zero Gate Voltage Drain Current (VDS = 80%BVDSS, VGS = 0V, TJ = 125C)
Gate-Source Leakage Current (VGS = ±20V, VCE =0V)
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 37C
Gate-Source Leakage Current (VGS= ±20V VCE =0V), Tj= 125C
MIN
1000
TYP
MAX UNIT
Volts
Volts
Volts
ohm
ohm
ohm
ohm
ohm
uA
uA
uA
nA
nA
nA
3.4
3.5
12.5
12.5
11.5
15
23.5
2
4.5
13.5
14
10
1
100
±100
10
500
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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