參數(shù)資料
型號(hào): MSAGZ52F120A
廠商: MICROSEMI CORP-COLORADO
元件分類: 功率晶體管
英文描述: Circular Connector; No. of Contacts:37; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:15-35 RoHS Compliant: No
中文描述: 52 A, 1200 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 52K
代理商: MSAGZ52F120A
MSAGZ52F120A
MSAHZ52F120A
1200 Volts
52 Amps
3.2 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHZ52F120A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj=
90
°
C
Peak Collector Current (pulse width limited by T
jmax
,)
Tj= 25
°
C
Tj=
90
°
C
Avalanche energy (single pulse)
@ I
C
= 25A,
V
CC
= 50V, L= 200
μ
H,
R
G
= 25
, Tj= 25
°
C
Short circuit current (SOA) ,
V
CE
1200V, T
J
= 150
°
C, t
sc
10
μ
s
Short circuit (reverse) current (RBSOA) ,
V
CE
1200V, T
J
= 150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHZ52F120A only)
Pulse Source Current (Body Diode, MSAHZ52F120A only)
Thermal Resistance, Junction to Case
Mechanical Outline
BV
CES
1200
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
1200
+/-20
+/-30
52
33
Volts
Volts
Volts
Amps
I
CM(25)
I
CM(90)
104
66
Amps
E
AS
65
mJ
I
C(sc)
260
66
300
A
A
I
C(sc)RBSOA
P
D
T
j
T
stg
I
S
I
SM
θ
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
50
100
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Datasheet# MSC0295A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER (MS…A)
GATE (MS…B)
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