參數(shù)資料
型號: MSC2712YT1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: General Purpose Amplifier Transistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 318D-04, SC-59, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 44K
代理商: MSC2712YT1
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev. 4
Publication Order Number:
MSC2712GT1/D
1
MSC2712GT1, MSC2712YT1
General Purpose
Amplifier Transistor
NPN Surface Mount
Moisture Sensitivity Level: 1
ESD Rating: TBD
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
CollectorBase Voltage
V
(BR)CBO
60
Vdc
CollectorEmitter Voltage
V
(BR)CEO
50
Vdc
EmitterBase Voltage
V
(BR)EBO
7.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Collector Current Peak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation
P
D
200
mW
Junction Temperature
T
J
150
°
C
Storage Temperature
T
stg
55 to +150
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
CollectorEmitter Breakdown Voltage
(I
C
= 2.0 mAdc, I
B
= 0)
V
(BR)CEO
50
Vdc
CollectorBase Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
7.0
Vdc
CollectorBase Cutoff Current
(V
CB
= 45 Vdc, I
E
= 0)
I
CBO
0.1
Adc
CollectorEmitter Cutoff Current
(V
CE
= 10 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0)
(V
CE
= 30 Vdc, I
B
= 0, T
A
= 80
°
C)
I
CEO
0.1
2.0
1.0
Adc
Adc
mAdc
DC Current Gain (Note 1)
(V
= 6.0 Vdc, I
C
= 2.0 mAdc)
MSC2712GT1
MSC2712YT1
h
FE
200
120
400
240
CollectorEmitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
0.5
Vdc
CurrentGain Bandwidth Product
(I
C
= 1 mA, V
CE
= 10.0 V, f = 10 MHz)
f
T
50
MHz
1. Pulse Test: Pulse Width
300 s, D.C.
2%.
SC59
CASE 318D
STYLE 1
MARKING DIAGRAMS
1
2
3
12G M
12G, 12 Y = Specific Device Code
M
= Date Code
COLLECTOR
3
2
BASE
1
EMITTER
Device
Package
Shipping
ORDERING INFORMATION
MSC2712GT1
SC59
3000/Tape & Reel
The “T1” suffix refers to a 7 inch reel.
http://onsemi.com
12Y M
MSC2712YT1
SC59
3000/Tape & Reel
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