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參數(shù)資料
| 型號： | MSD1819A-RT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | General Purpose Amplifier Transistor(通用放大器晶體管) |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-04, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 52K |
| 代理商： | MSD1819A-RT1 |
Semiconductor Components Industries, LLC, 2006
January, 2006 Rev. 5
1
Publication Order Number:
MSD1819ART1/D
MSD1819ART1
Preferred Device
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
Features
High h
FE
, 210460
Low V
CE(sat)
, < 0.5 V
Moisture Sensitivity Level 1
ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
60
Vdc
Collector-Emitter Voltage
V
(BR)CEO
50
Vdc
Emitter-Base Voltage
V
(BR)EBO
7.0
Vdc
Collector Current Continuous
I
C
100
mAdc
Collector Current Peak
I
C(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
150
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55 to +150
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SC70 (SOT323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
MSD1819ART1
SC70/
SOT323
3000/Tape & Reel
ZR
M
= Device Code
= Date Code*
= PbFree Package
MSD1819ART1G
SC70/
SOT323
(PbFree)
3000/Tape & Reel
ZR M
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSD1819A-RT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Amplifier Transistor |
| MSD1819A-RT1G | 功能描述:兩極晶體管 - BJT 100mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSD1819A-ST1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT |
| MSD-1G | 制造商:JVC Worldwide 功能描述:1G MICRO SDCARD |
| MSD-1G-NP | 制造商:JVC Worldwide 功能描述:1G MICRO SDCARD |
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