參數(shù)資料
型號(hào): MSM514212
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 5,048-Word x 8-Bit Line Memory
中文描述: 5,048字× 8位線存儲(chǔ)器
文件頁(yè)數(shù): 7/15頁(yè)
文件大?。?/td> 1398K
代理商: MSM514212
7/15
Semiconductor
MSM514212
SIGNAL DESCRIPTIONS
Data Inputs (D
IN
0 - D
IN
7)
Data on these inputs is shifted in on the rising edge of WCK while
WE
is held at a low level. The
data setup and hold times t
DS
and t
DH
are referenced to the rising edge of WCK.
Data Outputs (D
OUT
0 - D
OUT
7)
Data is shifted out on these outputs during the rising edge of RCK while
RE
is held at a low level.
The data becomes valid after the access time interval t
AC
which begins at the rising edge of RCK.
Write Address Pointer Reset (
WR
)
If
WR
is brought to a low level, the next rising edge of WCK resets the write address pointer to
the first address location. The write address pointer is automatically reset when the last address
location (5048) is clocked. The
WR
setup, and hold times t
RS
and t
RH
are referenced to the rising
edge of WCK. Each write operation, which begins after
WR
, must contain at least 18 active write
cycles, i.e. WCK cycles while
WE
is high.
Read Address Pointer Reset (
RR)
If
RR
is brought to a low level, the next rising edge of RCK resets the read address pointer to the
first address location. The read address pointer is automatically reset when the last address
location (5048) is clocked. The
RR
setup, and hold times t
RS
and t
RH
are referenced to the rising
edge of WCK. Each read operation, which begins after
RR
, must contain at least 18 active read
cycles, i.e. RCK cycles while
RE
is high.
Write Enable (
WE
)
This pin is used as a gating function for the WCK input. If
WE
is held low, normal write cycles
can occur. If
WE
is brought to a high level before the next rising edge of WCK, all subsequent
write cycles will be inhibited, and the write address pointer remains unchanged. The
WE
setup
and hold times t
WES
and t
WEH
are referenced to the rising edge of WCK.
Read Enable (
RE
)
This pin is used as a gating function for the RCK input. If RE is brought to a high level before the
next rising edge of RCK, all subsequent read cycles are inhibited, and the read address pointer
remains unchanged. The data outputs will tri-state after the output buffer turn off delay time t
HZ
,
which begins at the rising edge of RCK. After the disabled cycles are completed, and the RE signal
is brought back to a low level, the data output buffers are re-enabled by the next rising edge of
RCK. The RE setup, and hold times t
RES
and t
REH
are referenced to the rising edge of
RCK
.
Write Clock (WCK)
The rising edge of the WCK input latches the data into the internal registers, and also increments
the write address pointer when WE is held low.
Read Clock (RCK)
The rising edge of the RCK input shifts out the data from the internal registers and increments
the read address pointer when
RE
is held low.
相關(guān)PDF資料
PDF描述
MSM514221B-30JS 262,263-Word x 4-Bit Field Memory
MSM514221B-30RS 262,263-Word x 4-Bit Field Memory
MSM514221B-30ZS 262,263-Word x 4-Bit Field Memory
MSM514221B-40JS 262,263-Word x 4-Bit Field Memory
MSM514221B-40RS 262,263-Word x 4-Bit Field Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSM514221B 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:262,263-Word x 4-Bit Field Memory
MSM514221B-30 制造商:OK International 功能描述:
MSM514221B-30JS 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:262,263-Word x 4-Bit Field Memory
MSM514221B-30RS 制造商:OK International 功能描述:FIELD/FRAME/LINE MEMORY, 16 Pin, Plastic, DIP
MSM514221B-30ZS 制造商:OKI 制造商全稱:OKI electronic componets 功能描述:262,263-Word x 4-Bit Field Memory