參數(shù)資料
型號: MSM5432128
廠商: OKI SEMICONDUCTOR CO., LTD.
英文描述: 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
中文描述: 131,072字× 32位動態(tài)隨機(jī)存儲器:快速頁面模式型與江戶
文件頁數(shù): 1/24頁
文件大?。?/td> 293K
代理商: MSM5432128
1/24
Semiconductor
MSM5432126/8
DESCRIPTION
The MSM5432126/8 is a new generation Graphics DRAM organized in a 131,072-word
32-bit
configuration. The technology used to fabricate the MSM5432126/8 is OKI's CMOS silicon gate
process technology. The device operates with a single 5 V power supply.
FEATURES
131,072-word
32-bit organization
Single 5 V power supply,
±
10% tolerance
Refresh: 512 cycles/8 ms
Fast Page Mode with Extended Data Out (EDO)
Write per bit (MSM5432128 only)
Byte write, Byte read
RAS
only refresh
CAS
before
RAS
refresh
Hidden refresh
Package:
64-pin 525 mil plastic SSOP
(SSOP64-P-525-0.80-K)
(Product : MSM5432126-xxGS-K)
(Product : MSM5432128-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
131,072-Word
32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
Peimnay
Family
t
RAC
45 ns
50 ns
60 ns
Operating (Max.)
935 mW
907 mW
880 mW
Power Dissipation
Cycle Time
(Min.)
110 ns
130 ns
MSM5432126/8-50
MSM5432126/8-60
t
AA
23 ns 13 ns 13 ns
25 ns
30 ns
t
CAC
15 ns
18 ns
Standby (Max.)
Access Time (Max.)
11 mW
t
OEA
15 ns
18 ns
100 ns
MSM5432126/8-45
This version: Jan. 1998
Previous version: Dec. 1996
E2L0045-17-Y1
相關(guān)PDF資料
PDF描述
MSM548128BL-70GS-K 131,072-Word X 8-Bit High-Speed PSRAM
MSM548128BL-70RS 131,072-Word X 8-Bit High-Speed PSRAM
MSM548128BL-80GS-K 131,072-Word X 8-Bit High-Speed PSRAM
MSM548128BL-80RS 131,072-Word X 8-Bit High-Speed PSRAM
MSM548262-60JS 262,144-Word x 8-Bit Multiport DRAM
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