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參數(shù)資料
| 型號： | MSM54V32126 |
| 廠商： | OKI SEMICONDUCTOR CO., LTD. |
| 英文描述： | 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| 中文描述： | 131,072字× 32位動態(tài)隨機(jī)存儲器：快速頁面模式型與江戶 |
| 文件頁數(shù)： | 1/25頁 |
| 文件大小： | 303K |
| 代理商： | MSM54V32126 |
1/25
Semiconductor
MSM54V32126/8
This version: Jan. 1998
Previous version: Dec. 1996
DESCRIPTION
The MSM54V32126/8 is a new generation Graphics DRAM organized in a 131,072-word
￥
32-bit
configuration. The technology used to fabricate the MSM54V32126/8 is OKI's CMOS silicon gate
process technology. The device operates with a single 3.3 V power supply.
FEATURES
131,072-word
￥
32-bit organization
Single 3.3 V power supply,
±
0.3 V tolerance
Refresh: 512 cycles/8 ms
Fast Page Mode with Extended Data Out (EDO)
Write per bit (MSM54V32128 only)
Byte write, Byte read
RAS
only refresh
CAS
before
RAS
refresh
CAS
before
RAS
self-refresh
Hidden refresh
Package:
64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K)
(Product : MSM54V32126-xxGS-K)
(Product : MSM54V32128-xxGS-K)
xx indicates speed rank.
PRODUCT FAMILY
131,072-Word
￥
32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO
Peimnay
Family
t
RAC
50 ns
60 ns
Operating (Max.)
504 mW
486 mW
Power Dissipation
Cycle Time
(Min.)
110 ns
130 ns
MSM54V32126/8-50
MSM54V32126/8-60
t
AA
25 ns
30 ns
t
CAC
15 ns
18 ns
Standby (Max.)
Access Time (Max.)
3.1 mW
t
OEA
15 ns
18 ns
E2L0046-17-Y1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MSM54V32128 | 131,072-Word x 32-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO |
| MSM54V16272 | 262,144-Word x 16-Bit Multiport DRAM |
| MSM54V16273 | 262,144-Word x 16-Bit Multiport DRAM |
| MSM54V16282 | 262,144-Word x 16-Bit Multiport DRAM |
| MSM54V16283 | 262,144-Word x 16-Bit Multiport DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MSM5564 | 制造商:Panasonic Industrial Company 功能描述:I C |
| MSM56V16160J-10T3R17 | 制造商:ROHM Semiconductor 功能描述: |
| MSM56V16160J-75T3-K7 | 制造商:ROHM Semiconductor 功能描述: |
| MSM56V16160K-8T3-K | 功能描述:IC SDRAM 16M 125MHZ 50TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:4G（256M x 16） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP I 包裝:Digi-Reel® 其它名稱:557-1461-6 |
| MSM56V16400F-60T3KR | 制造商:ROHM Semiconductor 功能描述: |
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