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Semiconductor
MSM82C55A-2RS/GS/VJS
AC CHARACTERISTICS
Min.
Max.
Setup Time of Address to the Falling Edge of RD
tAR
20
—ns
Hold Time of Address to the Rising Edge of RD
tRA
0
—ns
Parameter
Unit
Symbol
Remarks
Setup Time of Address before the Falling Edge of WR
tAW
0
—ns
Load
150 pF
(VCC = 4.5 V to 5.5 V, Ta = –40 to +85°C)
MSM82C55A-2
Delay Time from the Falling Edge of RD to the Output of
Defined Data
tRD
—
120
ns
Delay Time from the Rising Edge of RD to the Floating of
Data Bus
tDF
10
75
ns
Time from the Rising Edge of RD or WR to the Next Falling
Edge of RD or WR
tRV
200
—ns
RD Pulse Width
tRR
100
—ns
Hold Time of Address after the Rising Edge of WR
tWA
20
—ns
WR Pulse Width
tWW
150
—ns
Setup Time of Bus Data before the Rising Edge of WR
tDW
50
—ns
Hold Time of Bus Data after the Rising Edge of WR
tWD
30
—ns
Delay Time from the rising Edge of WR to the Output of
Defined Data
tWB
—
200
ns
Setup Time of Port Data before the Falling Edge of RD
tIR
20
—ns
Hold Time of Port Data after the Rising Edge of RD
tHR
10
—ns
ACK Pulse Width
tAK
100
—ns
STB Pulse Width
tST
100
—ns
Setup Time of Port Data before the rising Edge of STB
tPS
20
—ns
Hold Time of Port Bus Data after the rising Edge of STB
tPH
50
—ns
Delay Time from the Falling Edge of ACK to the Output of
Defined Data
tAD
—
150
ns
Delay Time from the Rising Edge of ACK to the Floating of
Port (Port A in Mode 2)
tKD
20
250
ns
Delay Time from the Rising Edge of WR to the Falling Edge of
OBF
tWOB
—
150
ns
Delay Time from the Falling Edge of ACK to the Rising Edge of
OBF
tAOB
—
150
ns
Delay Time from the Falling Edge of STB to the Rising Edge of
IBF
tSIB
—
150
ns
Delay Time from the Rising Edge of RD to the Falling Edge of
IBF
tRIB
—
150
ns
Delay Time from the the Falling Edge of RD to the Falling Edge
of INTR
tRIT
—
200
ns
Delay Time from the Rising Edge of STB to the Rising Edge of
INTR
tSIT
—
150
ns
Delay Time from the Rising Edge of ACK to the Rising Edge of
INTR
tAIT
—
150
ns
Delay Time from the Falling Edge of WR to the Falling Edge of
INTR
tWIT
—
250
ns
Note: Timing measured at VL = 0.8 V and VH = 2.2 V for both inputs and outputs.