參數(shù)資料
型號: MSP430F2132TPWR
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PDSO28
封裝: GREEN, PLASTIC, TSSOP-28
文件頁數(shù): 47/81頁
文件大小: 1738K
代理商: MSP430F2132TPWR
MSP430F21x2
MIXED SIGNAL MICROCONTROLLER
SLAS578G -- NOVEMBER 2007 -- REVISED DECEMBER 2009
51
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
flash memory
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/
ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time (see Note 1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/erase endurance
104
105
cycles
tRetention
Data retention duration
TJ =25°C
100
years
tWord
Word or byte program time
30
tFTG
tBlock, 0
Block program time for first byte or word
25
tFTG
tBlock, 1-63
Block program time for each additional byte or word
See Note 2
18
tFTG
tBlock, End
Block program end-sequence wait time
SeeNote2
6
tFTG
tMass Erase
Mass erase time
10593
tFTG
tSeg Erase
Segment erase time
4819
tFTG
NOTES: 1. The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
2. These values are hardwired into the Flash Controller’s state machine (tFTG =1/fFTG).
RAM
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(RAMh)
RAM retention supply voltage (see Note)
CPU halted
1.6
V
NOTE: This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should happen
during this supply voltage condition.
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