參數(shù)資料
型號(hào): MSP430F2274TRHAT
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, FLASH, 16 MHz, RISC MICROCONTROLLER, PQCC40
封裝: GREEN, PLASTIC, QFN-40
文件頁(yè)數(shù): 53/94頁(yè)
文件大小: 1583K
代理商: MSP430F2274TRHAT
MSP430F22x2
MSP430F22x4
SLAS504E
– JULY 2006 – REVISED MARCH 2011
Flash Memory
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC (PGM/ERASE)
Program and erase supply voltage
2.2
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from VCC during program
2.2 V/3.6 V
1
5
mA
IERASE
Supply current from VCC during erase
2.2 V/3.6 V
1
7
mA
tCPT
Cumulative program time(1)
2.2 V/3.6 V
10
ms
tCMErase
Cumulative mass erase time
2.2 V/3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
(2)
30
tFTG
tBlock, 0
Block program time for 1st byte or word
(2)
25
tFTG
Block program time for each additional
tBlock, 1-63
(2)
18
tFTG
byte or word
tBlock, End
Block program end-sequence wait time
(2)
6
tFTG
tMass Erase
Mass erase time
(2)
10593
tFTG
tSeg Erase
Segment erase time
(2)
4819
tFTG
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
These values are hardwired into the flash controller
's state machine (tFTG = 1/fFTG).
RAM
over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
MAX
UNIT
V(RAMh)
RAM retention supply voltage (1)
CPU halted
1.6
V
(1)
This parameter defines the minimum supply voltage VCC when the data in RAM remains unchanged. No program execution should
happen during this supply voltage condition.
Copyright
2006–2011, Texas Instruments Incorporated
57
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