參數(shù)資料
型號: MSP430P112IDWR
廠商: TEXAS INSTRUMENTS INC
元件分類: 微控制器/微處理器
英文描述: 16-BIT, OTPROM, 5.35 MHz, RISC MICROCONTROLLER, PDSO20
封裝: GREEN, PLASTIC, SOIC-20
文件頁數(shù): 13/32頁
文件大?。?/td> 535K
代理商: MSP430P112IDWR
MSP430x11x
MIXED SIGNAL MICROCONTROLLERS
SLAS196D DECEMBER 1998 REVISED SEPTEMBER 2004
20
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted) (continued)
EPROM Memory, P- and E- versions only (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
V(PP)
Programming voltage, applied to TEST/VPP
12
12.5
13
V
I(PP)
Current from programming voltage source
70
mA
t(pps)
Programming time, single pulse
5
ms
t(ppf)
Programming time, fast algorithm
100
s
P(n)
Number of pulses for successful programming
4
100
Pulse
t(erase)
Erase time:
Wave length 2537 at 15 Ws/cm2
(UV lamp of 12 mW/ cm2)
30
min
t(erase)
Write/erase cycles
1000
cycles
Data retention Tj < 55
°C
10
Year
NOTES:
1. Refer to the Recommended Operating Conditions for the correct VCC during programming.
JTAG Interface
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
fTCK
TCK input frequency
see Note 1
3 V
DC
5
MHz
fTCK
TCK input frequency
see Note 1
5 V
DC
10
MHz
NOTES:
1. fTCK may be restricted to meet the timing requirements of the module selected.
JTAG Fuse (see Note 1)
PARAMETER
TEST
CONDITIONS
VCC
MIN
NOM
MAX
UNIT
VFB
Fuse blow voltage, C versions (see Note 2)
3 V/ 5 V
5.5
6
V
VFB
Fuse blow voltage, E/P versions (see Note 2)
3 V/ 5 V
11
13
V
IFB
Supply current into TEST/VPP during fuse blow
100
mA
tFB
Time to blow fuse
1
ms
NOTES:
1. Once the fuse is blown, no further access to the MSP430 JTAG/Test and emulation features is possible. The JTAG block is switched
to bypass mode.
2. The fuse blow voltage is applied to the TEST/VPP pin.
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