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參數(shù)資料
| 型號： | MT16HTS25664HY-53EXX |
| 元件分類： | DRAM |
| 英文描述： | 256M X 64 DDR DRAM MODULE, ZMA200 |
| 封裝： | LEAD FREE, MO-224, SODIMM-200 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 325K |
| 代理商： | MT16HTS25664HY-53EXX |
DDR2 SDRAM SODIMM
MT16HTS25664HY – 2GB
MT16HTS51264HY – 4GB
Features
200-pin, small-outline dual in-line memory module
(SODIMM)
Fast data transfer rates: PC2-3200, PC2-4200, or
PC2-5300
2GB (256 Meg x 64) or 4GB (512 Meg x 64)
VDD = VDDQ 1.8V
VDDSPD = 1.7–3.6V
JEDEC-standard 1.8V I/O (SSTL_18-compatible)
Differential data strobe (DQS, DQS#) option
4n-bit prefetch architecture
Multiple internal device banks for concurrent opera-
tion
Programmable CAS latency (CL)
Posted CAS additive latency (AL)
WRITE latency = READ latency - 1 tCK
Programmable burst lengths (BL): 4 or 8
Adjustable data-output drive strength
64ms, 8192-cycle refresh
On-die termination (ODT)
Serial presence detect (SPD) with EEPROM
Gold edge contacts
Dual-rank, TwinDie (2COB) DRAM devices
Figure 1: 200-Pin SODIMM (MO-224 R/C D)
Module height: 30mm (1.18in)
Options
Marking
Operating temperature1
– Commercial (0°C ≤ TA ≤ +70°C)
None
– Industrial (–40°C ≤ TA ≤ +85°C)
I
Package
– 200-pin DIMM (lead-free)
Y
Frequency/CL
– 2.5ns @ CL 6 (DDR2-800)
-800
– 3.0ns @ CL = 5 (DDR2-667)
-667
– 3.75ns @ CL = 4 (DDR2-533)
-53E
– 5.0ns @ CL = 3 (DDR2-400)3
-40E
Notes: 1. Contact Micron for industrial temperature
module offerings
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
Table 1: Key Timing Parameters
Speed
Grade
Industry
Nomenclature
Data Rate (MT/s)
tRCD
(ns)
tRP
(ns)
tRC
(ns)
CL = 6
CL = 5
CL = 4
CL = 3
-80E
PC2-6400
800
533
400
12.5
55
-800
PC2-6400
800
667
533
400
15
55
-667
PC2-5300
–
667
553
400
15
55
-53E
PC2-4200
–
553
400
15
55
-40E
PC2-3200
–
400
15
55
2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
Features
PDF: 09005aef821e5bf3
hts16c256_512x64h.pdf - Rev. E 3/10 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2006 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT16HTS25664HY-667A1 | 功能描述:MODULE DDR2 2GB 200SODIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT16HTS25664HZ-667H1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR2 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.8V - Bulk |
| MT16HTS25664HZ-800H1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX64 DDR2 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 1.8V - Bulk |
| MT16HTS51264HY-667A1 | 功能描述:MODULE DDR2 4GB 200-SODIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT16HTS51264HZ-667C1 | 制造商:Micron Technology Inc 功能描述:4GB 512MX64 DDR2 SDRAM MODULE 制造商:Micron Technology Inc 功能描述:4GB 512MX64 DDR2 SDRAM MODULE COMMERCIAL PBF SODIMM GREEN 1. - Bulk |
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