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參數(shù)資料
| 型號： | MT28C128564W18EFW-F606P856TBWT |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PBGA77 |
| 封裝： | FBGA-77 |
| 文件頁數(shù)： | 3/15頁 |
| 文件大?。?/td> | 203K |
| 代理商： | MT28C128564W18EFW-F606P856TBWT |
128Mb
MULTI
BANK
BURST
FLASH
32
Mb
/64Mb
BURST
Cellul
a
rRAM
COMBO
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on
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chnology
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ight
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ica
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on
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chnolo
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y,
Inc.
NOTE:
1. WAIT status is only valid for burst mode operation. WAIT should be ignored for all other operating modes.
Table 3:
Truth Table
MODES
FLASH SIGNALS
SHARED SIGNALS
CellularRAM SIGNALS
MEMORY OUTPUT
F_CE1# F_CE2# F_OE1# F_OE2# F_WE# F_RST#
ADV#
WAIT#
C_CE# C_CRE C_OE# C_UB/LB# C_WE#
MEMORY
BUS
CONTROL
DQ0–
DQ15
FL
AS
H
F
_
CE
1#
Read
LH
L
X
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
L
H
X
L
H
X
Asserted
Flash
DIN
Standby
H
X
XXH
X
High-Z
CellularRAMmemory any mode allowable
Other
High-Z
Output
Disable
LX
H
X
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
FL
ASH
F
_
CE
2#
Read
HL
X
L
H
L
Active1
CellularRAM memory must be in High-Z
Flash
DOUT
Write
H
L
X
H
L
H
X
Asserted
Flash
DIN
Standby
X
H
X
XXH
X
High-Z
CellularRAM memory any mode allowable
Other
High-Z
Output
Disable
XL
X
H
X
Active1
Other
High-Z
Reset
X
L
X
High-Z
None
High-Z
CE
LLU
LARR
AM
ME
MORY
Read
Flash must be in High-Z
L
Active1
LL
L
H
Cellular
RAM
DOUT
Write
L
Active1
LL
H
L
Cellular
RAM
DIN
Standby
Flash any mode allowable
XX
H
L
X
Other
High-Z
Output
Disable
XX
L
H
X
H
Other
High-Z
Deep
Sleep
Mode
XX
H
X
Other
High-Z
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