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    參數(shù)資料
    型號(hào): MT46H128M32L4CM-5AT:A
    元件分類: DRAM
    英文描述: 128M X 32 DDR DRAM, 5 ns, PBGA90
    封裝: 10 X 13 MM, GREEN, PLASTIC, VFBGA-90
    文件頁(yè)數(shù): 8/106頁(yè)
    文件大?。?/td> 3431K
    Revision History
    Rev. M – 11/10
    Relaxed input capacitance for CK/CK# max from 3.0 to 3.5pF. This change was inten-
    ded to have been included in the Rev K update.
    Rev. L – 09/10
    Added A14 to 168-ball diagram.
    Added Package Block Diagram section.
    Rev. K – 08/10
    Added contact factory note for AT.
    Deleted all rows except the full array row in the IDD6 table; added note 14 in the table.
    Relaxed the input capacitance: command and address from 3.0 to 3.5pF.
    Rev. J – 06/10
    Updated AT IDD tables.
    Rev. H – 05/10
    Added reduced page mode.
    Updated IDD tables.
    Changed status to Production.
    Rev. G – 04/10
    Changed IOZ,min in table 5 from -5A to -1.5A and IOX,max from 5A to 1.5A.
    Updated the 85°C IDD tables:
    – IDD0 x16 and x32 for -5, -54 and -6.
    – IDD2N x16 and x32 for -5 and -54.
    – IDD2NS x16 and x32 for -5 and -54.
    – IDD3N x16 and x32 for all speed grades.
    – IDD3NS x16 and x32 for -5, -54, and -6.
    – IDD4R and Idd4W x16 and x32 for -5, -54, and -6.
    – IDD5A x16 and x32 for all speed grades.
    Rev. F – 04/10
    Changed A9 from DQ23 to DQS3 in 240-Ball FBGA – 14mm x 14mm (Top View), x32
    Only figure.
    Rev. E – 03/10
    Added configuration information to figure 1.
    2Gb: x16, x32 Mobile LPDDR SDRAM
    Revision History
    PDF: 09005aef83a73286
    2gb_ddr_mobile_sdram_t69m.pdf - Rev. M 11/10 EN
    105
    Micron Technology, Inc. reserves the right to change products or specifications without notice.
    2009 Micron Technology, Inc. All rights reserved.
    相關(guān)PDF資料
    PDF描述
    MT46H128M32L4KQ-75:A 128M X 32 DDR DRAM, 6 ns, PBGA168
    MT46H128M32L4MA-54:A 128M X 32 DDR DRAM, 5 ns, PBGA168
    MT46H128M32LFCM-5AT:A 128M X 32 DDR DRAM, 5 ns, PBGA90
    MT46H128M32LFCM-5IT:A 128M X 32 DDR DRAM, 5 ns, PBGA90
    MT46V128M4FN-75E:C 128M X 4 DDR DRAM, 0.75 ns, PBGA60
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