參數(shù)資料
型號(hào)： MT4VR3218AG-845B1
元件分類： DRAM
英文描述： 32M X 18 RAMBUS MODULE, 45 ns, DMA84
封裝： RIMM-184
文件頁數(shù)： 3/8頁
文件大小： 183K
代理商： MT4VR3218AG-845B1
3
32, 48, 64, 128 Meg x 16/18 Rambus RIMM Modules
Micron Technology, Inc., reserves the right to change products or specifications without notice.
RM01.p65 – Rev. 9/99
1999, Micron Technology, Inc.
32, 48, 64, 128 MEG x 16/18
RAMBUS RIMM MODULES
ADVANCE
FUNCTIONAL BLOCK DIAGRAM
A0
SA0
SERIAL PD
SDA
A1
SA1
A2
SA2
WP
SCL
47K
U0
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
SIO0
SIO1
SCK
CMD
VREF
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
RCFM
RCFMN
RCTM
RCTMN
RROW2..0
RCOL4..0
RDQA8..0
RDQB8..0
UN
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
SIO0
SIO1
SCK
CMD
VREF
U1
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
SIO0
SIO1
SCK
CMD
VREF
U2
LCFM
LCFMN
LCTM
LCTMN
LROW2..0
LCOL4..0
LDQA8..0
LDQB8..0
SIO0
SIO1
SCK
CMD
VREF
V
R
E
F
R
C
M
D
R
S
C
K
Two 0.1
F per RDRAM
0.1
F
VDD
GND
One 0.1
F per two RDRAM
VREF
GND
One 0.1
F per two RDRAM
VCMOS
GND
One 0.1
F to SPD
SVDD
GND
MODULE
CAPACITY
N
256MB
16
128MB
8
96MB
6
64MB
4
NOTE: 1. Rambus channel signals form a loop through the
RIMM module, with the exception of the SIO chain.
S
O
U
T
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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