參數(shù)資料
型號(hào)： MT55L256V36PT-6
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 256K X 36 ZBT SRAM, 3.5 ns, PQFP100
封裝： PLASTIC, TQFP-100
文件頁(yè)數(shù)： 25/25頁(yè)
文件大?。?/td> 304K
代理商： MT55L256V36PT-6
9
8Mb: 512K x 18, 256K x 32/36 Pipelined ZBT SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT55L512L18P_C.p65 – Rev. 2/02
2002, Micron Technology, Inc.
8Mb: 512K x 18, 256K x 32/36
PIPELINED ZBT SRAM
FBGA PIN DESCRIPTIONS
x18
x32/x36
SYMBOL
TYPE
DESCRIPTION
6R
SA0
Input
Synchronous Address Inputs: These inputs are registered and
6P
SA1
must meet the setup and hold times around the rising edge of
2A, 9A, 10A, 2A, 9A, 10A,
SA
CLK.
11A, 2B, 10B,
2B, 10B,
3P, 4P, 8P,
9P, 10P, 3R,
4R, 8R, 9R,
10R, 11R
5B
BWa#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
4A
5A
BWb#
individual bytes to be written and must meet the setup and hold
–
4A
BWc#
times around the rising edge of CLK. A byte write enable is LOW
–
4B
BWd#
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb.
For the x32 and x36 versions, BWa# controls DQa’s and DQPa;
BWb# controls DQb’s and DQPb; BWc# controls DQc’s and DQPc;
BWd# controls DQd’s and DQPd. Parity is only available on the
x18 and x36 versions.
7A
CKE#
Input
Synchronous Clock Enable: This active LOW input permits CLK to
propogate throughout the device. When CKE# is HIGH, the
device ignores the CLK input and effectively internally extends
the previous CLK cycle. This input must meet the setup and hold
times around the rising edge of CLK.
7B
R/W#
Input
Read/Write: This input determines the cycle type when ADV/LD#
is LOW and is the only means for determining READs and
WRITEs. READ cycles may not be converted into WRITEs (and vice
versa) other than by loading a new address. A LOW on this pin
permits BYTE WRITE operations to meet the setup and hold times
around the rising edge of CLK. Full bus-width WRITEs occur if all
byte write enables are LOW.
6B
CLK
Input
Clock: This signal registers the address, data, chip enable, byte
write enables and burst control inputs on its rising edge. All
synchronous inputs must meet setup and hold times around the
clock’s rising edge.
3A
CE#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device. CE# is sampled only when a new external address is
loaded.
6A
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
11H
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in
the memory array is retained. When ZZ is active, all other inputs
are ignored.
3B
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to
enable the device and is sampled only when a new external
address is loaded.
(continued on next page)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT55L256V36PT-7.5 制造商:Cypress Semiconductor 功能描述:256KX36 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk
MT55L256V36PT-7.5TR 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel
MT55L512L18FF-11 制造商:Micron Technology Inc 功能描述:
MT55L512L18FT-12 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述:
MT55L512L18P 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb ZBT SRAM
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