參數(shù)資料
型號: MTB50P03HDLT4
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 6/12頁
文件大小: 182K
代理商: MTB50P03HDLT4
MTB50P03HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
20
40
80
100
60
0
0.4
0.8
1.2
1.6
2.0
0
20
40
80
100
Figure 1. On–Region Characteristics
1.5
1.9
2.3
2.7
3.5
4.3
Figure 2. Transfer Characteristics
0
2040
6080
100
0.015
0.017
0.021
0.025
0.029
0.015
0.017
0.019
0.021
0.022
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.85
0.95
1.05
1.25
1.35
0
5
10
20
25
30
100
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage
Current versus Voltage
– 25
0
25
50
75
100
125
150
60
0.2
0.6
1.0
1.4
1.8
3.9
0.027
0.023
0.019
0
2040
6080
100
0.020
0.018
0.016
1.15
15
VGS = 10 V
4 V
8 V
100
°C
25
°C
TJ = – 55°C
TJ = 25°C
10 V
VGS = 5 V
–55
°C
VGS = 0 V
TJ = 125°C
100
°C
3 V
3.5 V
TJ = 25°C
6 V
3.1
VGS = 5 V
ID = 25 A
TJ = 100°C
25
°C
10
2.5 V
5 V
4.5 V
VDS ≥ 5 V
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