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參數(shù)資料
| 型號(hào)： | MTB60N06HDT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大小： | 280K |
| 代理商： | MTB60N06HDT4 |
MTB60N06HD
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
20
40
80
120
100
60
0
1.0
2.0
3.0
4.0
5.0
0
20
40
80
120
Figure 1. On–Region Characteristics
2.0
2.8
3.6
4.4
6.0
7.6
Figure 2. Transfer Characteristics
0
20
40
60
80
120
0.006
0.008
0.012
0.016
0.020
0.0100
0.0108
0.0116
0.0124
0.0132
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.0
1.4
1.8
0
10
20
40
50
60
1
10
100
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage
Current versus Voltage
– 25
0
25
50
75
100
125
150
100
60
0.5
1.5
2.5
3.5
4.5
6.8
0.018
0.014
0.010
100
0
20
40
60
80
120
100
0.0128
0.0120
0.0112
0.0104
1.2
1.6
30
VGS = 10 V
9 V
8 V
100
°C
25
°C
TJ = – 55°C
TJ = 25°C
15 V
VGS = 10 V
– 55
°C
VGS = 0 V
TJ = 125°C
100
°C
25
°C
5 V
6 V
TJ = 25°C
7 V
10
30
50
70
90
110
10
30
50
70
90
110
VDS ≥ 10 V
5.2
VGS = 10 V
ID = 30 A
TJ = 100°C
25
°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
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