參數(shù)資料
型號(hào)： MTD1302
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： DPAK-3
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 128K
代理商： MTD1302
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MTD1302/D
MTD1302
Advance Information
Power MOSFET
20 Amps, 30 Volts
N–Channel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters, and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
30
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
30
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp
≤ 10 ms)
VGS
VGSM
± 20
Vdc
Vpk
Drain Current – Continuous
Drain Current – Continuous @ 100
°C
Drain Current – Single Pulse (tp ≤ 10 s)
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TC = 25°C
(Note 1.)
PD
74
0.592
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 20 Apk, L = 1.0 mH, RG = 25 )
EAS
200
mJ
Thermal Resistance
Junction to Case
Junction–to–Ambient
Junction–to–Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from Case for 5.0
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
20 AMPERES
30 VOLTS
RDS(on) = 22 m
Device
Package
Shipping
ORDERING INFORMATION
MTD1302
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
http://onsemi.com
N–Channel
D
S
G
MTD1302–1
DPAK
75 Units/Rail
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
1302
MTD1302T4
DPAK
2500 Tape & Reel
1
2
3
4
相關(guān)PDF資料
PDF描述
MTD1302-1 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1302T4 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1312T4 6 A, 30 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50ET4 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
MTD1N50EG 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
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