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參數(shù)資料
| 型號： | MTD1302 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | MTD1302 |
MTD1302
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
30
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
–
10
100
Adc
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
VGS(th)
1.0
1.5
2.0
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 10 Adc)
(VGS = 4.5 Vdc, ID = 5.0 Adc)
RDS(on)
–
0.019
0.026
0.022
0.029
Ohms
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 20 Adc)
(VGS = 10 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on)
–
0.38
–
0.5
0.33
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 10 Adc)
gFS
10
16
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
–
755
1162
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
370
518
Transfer Capacitance
f = 1.0 MHz)
Crss
–
102
204
SWITCHING CHARACTERISTICS (Note 3.)
Turn–On Delay Time
td(on)
–
7.2
15
ns
Rise Time
(VDD = 15 Vdc, ID = 20 Adc,
VGS =10Vdc
tr
–
52
104
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
–
45
90
Fall Time
RG 9.1 )
tf
–
73
146
Gate Charge
QT
–
14.5
21.8
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
–
2.2
–
(VDS 24 Vdc, ID 20 Adc,
VGS = 5.0 Vdc)
Q2
–
8.8
–
Q3
–
6.8
–
Gate Charge
QT
–
27
40.5
nC
(VDS = 24 Vdc, ID = 20 Adc,
Q1
–
2.2
–
(VDS 24 Vdc, ID 20 Adc,
VGS = 10 Vdc)
Q2
–
10
–
Q3
–
7.2
–
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
–
0.83
0.79
1.1
–
Vdc
Reverse Recovery Time
trr
–
38
–
ns
(IS = 20 Adc, VGS = 0 Vdc,
ta
–
19
–
(IS 20 Adc, VGS 0 Vdc,
dIS/dt = 100 A/s)
tb
–
20
–
Reverse Recovery Stored Charge
QRR
–
36
–
C
2. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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