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參數(shù)資料
| 型號(hào)： | MTD1P40ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 126K |
| 代理商： | MTD1P40ET4 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. XXX
1
Publication Order Number:
MTD1P40E/D
MTD1P40E
Preferred Device
Advance Information
Power MOSFET
1 Amp, 400 Volts
PChannel DPAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition this advanced high voltage
MOSFET is designed to withstand high energy in the avalanche and
commutation modes. The energy efficient design also offers a
draintosource diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
D
S
G
1 AMPERES
400 VOLTS
RDS(on) = 8
Device
Package
Shipping
ORDERING INFORMATION
MTD1P40E
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
http://onsemi.com
PChannel
MTD1P40E1
DPAK
75 Units/Rail
MARKING
DIAGRAM
Y
= Year
WW
= Work Week
T
= MOSFET
YWW
T
1P40E
MTD1P40ET4
DPAK
2500 Tape & Reel
1
2
3
4
Preferred devices are recommended choices for future use
and best overall value.
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