參數資料
型號: MTD1P40ET4
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: DPAK-3
文件頁數: 7/12頁
文件大小: 126K
代理商: MTD1P40ET4
MTD1P40E
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
5 V
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
DI
,DRAIN
CURRENT
(AMPS)
1.8
1.6
1.4
0.6
0
02
4
6
8
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
VGS = 10 V
8 V
TJ = 25°C
DI
,DRAIN
CURRENT
(AMPS)
2
1.5
1
0.5
0
2
468
VGS, GATETOSOURCE VOLTAGE (VOLTS)
VDS ≥ 10 V
TJ = 55°C
25
°C
0.2
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ = 25°C
VGS = 10 V
15 V
4.4
5.2
5.6
4.8
0.4
1.4
12
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
2
6
4
0
0.2
0.4
12
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 100°C
55
°C
4.0
0
12
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
VGS = 0 V
0
200
500
100
300
TJ = 125°C
1000
10
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
VGS = 10 V
ID = 0.5 A
50
50
150
75
25
0
25
0.25
2
1.5
1
0.5
0
400
100
°C
0.4
1.2
1.0
0.8
25
°C
0.6
0.8
1.2
1.4
1.6
1.8
8
10
13
5
7
9
4 V
4.5 V
5.5 V
6 V
0.6
1.6
1.2
0.2
0.8
1.8
4.6
5.4
5.8
5.0
4.2
6.0
125
100
0.75
1.25
1.75
相關PDF資料
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MTD1P40E 1 A, 400 V, 8 ohm, P-CHANNEL, Si, POWER, MOSFET
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