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參數(shù)資料
| 型號： | MTD2N50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 500 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369A-13, DPAK-3 |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 147K |
| 代理商： | MTD2N50E |
MTD2N50E
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相關(guān)PDF資料 |
PDF描述 |
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| MTD3302 | 8300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTD4N20E | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20E1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD4N20E-1 | 4 A, 200 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTD9N10ET4 | 9 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2N50E1 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD3010N | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學 - 光電檢測器 - 光電二極管 系列:- 標準包裝:1 系列:- 波長:850nm 顏色 - 增強型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標準）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| MTD3010N-DIG | 制造商:Marktech Optoelectronics 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 |
| MTD3010PM | 功能描述:PHOTO DIODE 900NM DOME CLR TO-18 RoHS:是 類別:傳感器，轉(zhuǎn)換器 >> 光學 - 光電檢測器 - 光電二極管 系列:- 標準包裝:1 系列:- 波長:850nm 顏色 - 增強型:- 光譜范圍:400nm ~ 1100nm 二極管類型:引腳 nm 下響應(yīng)率:0.62 A/W @ 850nm 響應(yīng)時間:5ns 電壓 - (Vr)（最大）:50V 電流 - 暗（標準）:1nA 有效面積:1mm² 視角:150° 工作溫度:-40°C ~ 100°C 封裝/外殼:徑向，5mm 直徑（T 1 3/4） 其它名稱:475-2649-6 |
| MTD3010PM_11 | 制造商:MARKTECH 制造商全稱:Marktech Corporate 功能描述:Peak Sensitivity Wavelength: 900nm |
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