參數(shù)資料
型號: MTDF1N02HDR2
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: MICROPAK-8
文件頁數(shù): 7/12頁
文件大?。?/td> 126K
代理商: MTDF1N02HDR2
MTDF1N02HD
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
2.7 V
VGS = 4.5 V
TJ = 25°C
2.3 V
2.1 V
1.9 V
2.7 V
4.5 V
VGS = 10 V
1.7 V
1.5 V
I DSS
,LEAKAGE
(nA)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
0.4
1.6
2
0
1.0
3.0
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 3. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
0.05
Figure 5. On–Resistance versus
Gate–to–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 6. On–Resistance versus Drain Current
and Gate Voltage
1.0
100
Figure 7. On–Resistance Variation
with Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Drain–to–Source Leakage Current
versus Voltage
VDS ≥ 10 V
TJ = -55°C
25°C
100°C
4.0
2.0
4.0
1.0
2.0
2.5
0.5
0.15
0
1.0
2.0
10
0
5.0
10
15
20
0.09
3.0
4.0
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C)
-50
0
50
100
150
0
0.4
1.2
1.6
2.0
VGS = 4.5 V
ID = 0.85 A
125
75
25
-25
VGS = 0 V
TJ = 125°C
100°C
1.2
1.5
1.0
0.11
0.13
1000
0.1
25°C
0.8
0.4
0.5
0.6
0.3
0.1
0.2
0
2.0
4.0
8.0
6.0
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID = 1.7 A
TJ = 25°C
0
0.07
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MTDF1N03HDR2 2000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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