- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄98046 > MTDF1N02HDR2 (ON SEMICONDUCTOR) 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數(shù)資料
| 型號： | MTDF1N02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 126K |
| 代理商： | MTDF1N02HDR2 |
MTDF1N02HD
http://onsemi.com
6
Figure 10. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
Figure 11. Resistive Switching Time
Variation versus Gate Resistance
V GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
Qg, TOTAL GATE CHARGE (nC)
0
1.0
2.0
3.0
ID = 1.7 A
TJ = 25°C
VGS
4.0
1.0
0
6.0
5.0
18
15
9.0
6.0
0
VDS
QT
Q1
Q2
4.0
5.0
V DS
,DRAIN-T
O-SOURCE
VOL
TAGE
(VOL
TS)
t,TIME
(ns)
RG, GATE RESISTANCE (OHMS)
1.0
100
10
VDD = 10 V
ID = 1.7 A
VGS = 4.5 V
TJ = 25°C
td(on)
tr
100
10
td(off)
tf
3.0
2.0
12
Q3
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 13. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
0.5
0.6
0.7
0
0.8
1.2
1.6
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 12. Diode Forward Voltage versus Current
I S
,SOURCE
CURRENT
(AMPS)
VGS = 0 V
TJ = 25°C
0.8
0.9
2.0
0.4
0.55
0.65
0.75
0.85
相關PDF資料 |
PDF描述 |
|---|---|
| MTDF1N03HDR2 | 2000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1N03HDR2 | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1P02HDR2 | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF2N06HDR2 | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF2N06HD | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
| MTD-H5 | 功能描述:HSPA+ USB CELLULAR MODEM 制造商:multi-tech systems 系列:QuickCarrier? USB-D 零件狀態(tài):Not Recommended For New Designs 功能:收發(fā)器，HSPA，調制解調器 調制或協(xié)議:HSPA+ 頻率:850MHz，900MHz，1.7GHz，1.9GHz，2.1GHz 應用:- 接口:USB 靈敏度:- 功率 - 輸出:- 數(shù)據(jù)速率（最大值）:21Mbps 特性:USB 供電 電壓 - 電源:5V，USB 標準包裝:10 |
發(fā)布緊急采購，3分鐘左右您將得到回復。