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參數(shù)資料
| 型號： | MTDF1N03HDR2 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 225K |
| 代理商： | MTDF1N03HDR2 |
MTDF1N03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
29
—
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
—
1.0
25
Adc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(3)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
—
1.6
3.7
—
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(3)
(VGS = 10 Vdc, ID = 1.7 Adc)
(VGS = 4.5 Vdc, ID = 0.85 Adc)
RDS(on)
—
96
135
120
160
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.85 Adc)
(1)
gFS
1.0
2.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
—
140
—
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
—
70
—
Transfer Capacitance
f = 1.0 MHz)
Crss
—
30
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
15 Vd
I
1 7 Ad
td(on)
—
7.5
—
ns
Rise Time
(VDS = 15 Vdc, ID = 1.7 Adc,
tr
—
10
—
Turn–Off Delay Time
( DS
, D
,
VGS = 10 Vdc, RG = 6 ) (1)
td(off)
—
22
—
Fall Time
tf
—
18
—
Turn–On Delay Time
(V
15 Vd
I
0 85 Ad
td(on)
—
7.0
—
ns
Rise Time
(VDD = 15 Vdc, ID = 0.85 Adc,
tr
—
8.2
—
Turn–Off Delay Time
( DD
, D
,
VGS = 4.5 Vdc, RG = 6 ) (1)
td(off)
—
22
—
Fall Time
tf
—
14.5
—
Gate Charge
(V
24 Vd
I
1 7 Ad
QT
—
5.0
7.0
nC
(VDS = 24 Vdc, ID = 1.7 Adc,
Q1
—
0.5
—
( DS
, D
,
VGS = 10 Vdc)
Q2
—
1.65
—
Q3
—
1.3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.7 Adc, VGS = 0 Vdc) (1)
(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
0.84
0.7
1.0
—
Vdc
Reverse Recovery Time
(I
1 7 Adc V
0 Vdc
trr
—
20
—
ns
(IS = 1.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s) (1)
ta
—
12
—
dIS/dt = 100 A/s) (1)
tb
—
8.0
—
Reverse Recovery Storage Charge
QRR
—
0.012
—
C
(1) Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA
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