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參數(shù)資料
| 型號： | MTM23224 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SMINI3-G1, 3 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 273K |
| 代理商： | MTM23224 |
1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
Tel. +81-75-951-8151
http://panasonic.co.jp/semicon
Products and specifications are subject to change without notice.
Please ask for the latest Product Standards to guarantee the satisfaction
of your product requirements.
,
Attains the industry’s lowest on-resistance with an SMini (2120) package size.
Small, Low On-Resistance MOSFET Series
New publication, effective from 31 Oct. 2005
M00695BE
Overview
The new MTM23123/MTM23110/MTM23223/MTM23224
MOSFETs contribute to reduced dimensions and weight as well as
lower power consumption for cellular phones, digital still cameras,
digital video cameras, notebook PCs, AV systems and other
electronic equipment. This, in turn, results in longer operation time
for battery-driven equipment.
Feature
Low voltage operation possible (1.8V, 2.5V and 4V)
Latest micromachining process achieves 14m mm2 (P channel)/4.6m
mm2 (N channel)
Package: SMini3-G1
Unit : mm
Applications
Mobile electronic equipment, cellular phones, digital still cameras and digital video cameras
Specifications
2.1
±
0.1
1.3±0.1
0.3
+0.1
–0.0
2.0±0.2
1.25
±
0.10
(0.425)
1
3
2
(0.65) (0.65)
0.2
±
0.1
0.9
±
0.1
0
to
0.1
0.9
+0.2 –0.1
0.15
+0.10
–0.05
5
10
SMini3-G1
90
-
250
1.2
±10
20
MTM23224
SMini3-G1
1200
26
20
4.5
±10
20
MTM23223
N
SMini3-G1
1200
35
30
-4.0
±8
-12
MTM23110
SMini3-G1
1000
45
40
-3.0
±10
-20
MTM23123
P
VGS 2.5V
VGS 4.0V
Package
Ciss (pF)
RDS(on) (typ) (m)
ID
(A)
VGSS
(V)
VDSS
(V)
Model
Polarity
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參數(shù)描述 |
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| MTM232270LBF | 功能描述:MOSFET Nch MOS FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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