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參數(shù)資料
| 型號(hào)： | MTM23224 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1200 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SMINI3-G1, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 273K |
| 代理商： | MTM23224 |
°C
mW
A
V
Unit
2
-16
I
DP
Drain peak current
-3.0
I
D
Drain current
± 10
V
GSS
Gate-Source voltage
-20
V
DSS
Drain-Source voltage
1
500
P
D
Power dissipation
125
T
ch
Channel temperature
55 to +125
T
stg
Storage temperature
Note
Rating
Symbol
Parameter
pF
120
VDS = -10 V , VGS = 0 V, f = 1 MHz
Coss
Small-signal short-circuit
output capacitance
pF
1000
VDS = -10 V , VGS = 0 V, f = 1 MHz
Ciss
Small-signal short-circuit
input capacitance
m
55
40
ID = -1 A , VGS = -4.0 V
RDS(ON)
Drain resistance 1 *3
V
-1.3
-0.85
-0.4
ID = -1 mA , VDS = -10.0 V
Vth
Gate threshold voltage
A
± 10
VGS = ± 8 V , VDS = 0 V
IGSS
Gate-Source cutoff voltage
A
-1.0
VDS = -20 V , VGS = 0 V
IDSS
Drain-Source cutoff voltage
ns
70
VDD = -10 V, VGS = -4 to 0 V, ID = -1 A
tf
Fall time
V
-20
ID = -1 mA , VGS = 0 V
VDSS
Drain-Source voltage
m
70
45
ID = -0.5 A , VGS = -2.5 V
RDS(ON)
Drain resistance 2 *3
S
3.5
ID = -1 A , VDS = -10 V, f = 1 kHz
|Yfs|
Forward transfer
admittance *3
ns
25
VDD = -10 V, VGS = 0 to -4 V, ID = -1 A
tr
Rise time
pF
120
VDS = -10 V , VGS = 0 V, f = 1 MHz
Crss
Small-signal reverse
transfer capacitance
Typ.
Min.
Unit
Max.
Condition
Symbol
Parameter
MTM23123
Absolute Maximum Ratings
Electrical characteristics Ta = 25
°C ± 3°C
Silicon Field Effect Transistors
P-Channel MOS Type
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
1) Measuring on Ceramic substrate at 40×38×0.1 mm. Absolute maximum rating PD without heat sink shall be made 150 mW.
2) Pulse Width ≦10 s, Duty Cycle ≦1 %
3) Pulse Test:Pulse Width <300 s, Duty Cycle <2 %
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