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參數(shù)資料
| 型號： | MTP12N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM |
| 中文描述： | 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 239K |
| 代理商： | MTP12N10E |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Designed to Eliminate the Need for External Zener Transient
Suppressor — Absorbs High Energy in the Avalanche Mode
Commutating Safe Operating Area (CSOA) Specified for Use
in Half and Full Bridge Circuits
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
100
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Single Pulse (tp
≤
50
μ
s)
100
Vdc
±
20
±
40
Vdc
Drain Current — Continuous
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
IDM
12
30
Adc
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
79
0.53
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to 175
°
C
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
(TJ
≤
175
°
C)
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25
, Peak IL = 12 A)
(See Figures 15, 16 and 17)
EAS
290
mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
°
R
θ
JC
R
θ
JA
TL
1.9
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTP12N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
12 AMPERES
100 VOLTS
RDS(on) = 0.16 OHM
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
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PDF描述 |
|---|---|
| MTP1N60E | TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM |
| MTP1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP33N10E | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP12N18 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12N20 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 12A, 150-200 V |
| MTP12P06 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP12P10 | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP12P10G | 功能描述:MOSFET 100V 12A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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