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參數(shù)資料
| 型號(hào)： | MTP1N80E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| 中文描述： | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 221K |
| 代理商： | MTP1N80E |
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
800
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
800
Vdc
— Non–Repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
1.0
0.8
4.0
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
48
0.38
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 2.0 Apk, L = 10 mH, RG = 25
)
20
mJ
Thermal Resistance — Junction to Case
°
— Junction to Ambient
°
R
θ
JC
R
θ
JA
TL
2.63
°
62.5
°
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MTP1N80E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
1.0 AMPERES
800 VOLTS
RDS(on) = 12 OHMS
Motorola Preferred Device
D
S
G
CASE 221A–06, Style 5
TO–220AB
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| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP33N10E | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP4N80 | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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