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參數(shù)資料
| 型號： | MTP1N80E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS |
| 中文描述： | 1 A, 800 V, 12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 221K |
| 代理商： | MTP1N80E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
Figure 1. On–Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VGS = 10 V
15 V
12
15
VGS = 0 V
0
200
400
1
100
100
300
600
500
TJ = 125
°
C
100
°
C
1000
16
14
13
10
0.4
1.2
0.8
1.6
2.0
D
I
2.0
1.2
0.8
0.4
00
5
10
15
20
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS = 10 V
8 V
6 V
4 V
5 V
TJ = 25
°
C
D
I
2.0
1.2
0.8
0.4
02.0
2.5
3.0
3.5
4.0
6.0
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–55
°
C
5.0
TJ = 100
°
C
25
°
C
R
11
9
0
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 0.5 A
–50
0
50
100
150
125
–25
25
75
2.5
2
1.5
1
0.5
0
1.6
1.6
4.5
5.5
3
9
6
0
0
0.50
1.0
1.50
2.0
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
TJ = 25
°
C
100
°
C
–55
°
C
18
0.25
0.75
1.25
1.75
12
15
10
700
800
0.1
25
°
C
VDS
≥
10 V
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PDF描述 |
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| MTP23P06V | TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM |
| MTP33N10E | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP33N10 | TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM |
| MTP4N80 | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
| MTP4N80E | TMOS POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM |
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