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參數(shù)資料
| 型號(hào)： | MTP7N20E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS |
| 中文描述： | 7 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 223K |
| 代理商： | MTP7N20E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (positive)
V(BR)DSS
200
—
—
689
—
—
Vdc
mV/
°
C
μ
Adc
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
°
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
IDSS
—
—
—
—
10
100
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (negative)
μ
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 7.0 Adc)
°
(VGS = 10 Vdc, ID = 3.5 Adc, TJ = 125
°
C)
Forward Transconductance (VDS = 14 Vdc, ID = 3.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
VGS(th)
2.0
—
3.1
7.1
4.0
—
Vdc
mV/
°
C
Ohm
RDS(on)
VDS(on)
—
0.46
0.7
—
—
3.4
—
5.9
5.1
Vdc
gFS
1.5
—
—
mhos
f = 1.0 MHz)
Ciss
Coss
Crss
—
342
480
pF
(VDS = 25 Vdc, VGS = 0 Vdc,
—
92
130
Reverse Transfer Capacitance
—
27
55
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
VGS = 10 Vdc, Rg = 9.1
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
8.8
17.6
ns
Rise Time
(VDD = 100 Vdc, ID = 7.0 Adc,
—
29
58
Turn–Off Delay Time
—
22
44
Fall Time
—
20
40.8
Gate Charge
VGS = 10 Vdc)
—
13.7
21
nC
(See Figure 8)
(VDS = 160 Vdc, ID = 7.0 Adc,
—
3.3
—
6.6
—
—
5.9
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 7.0 Adc, VGS = 0 Vdc)
(IS = 7.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.02
0.9
1.2
—
Vdc
Reverse Recovery Time
(See Figure 14)
dIS/dt = 100 A/
μ
s)
trr
ta
tb
—
138
—
ns
(IS = 7.0 Adc, VGS = 0 Vdc,
—
93
—
—
45
—
Reverse Recovery Stored Charge
QRR
—
0.74
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
″
(Measured from the drain lead 0.25
″
from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad.)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
(2) Switching characteristics are independent of operating junction temperature.
Ld
—
—
3.5
4.5
—
—
nH
Ls
—
7.5
—
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