- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378680 > MTSF2P02HD (MOTOROLA INC) SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM PDF資料下載
參數(shù)資料
| 型號(hào)： | MTSF2P02HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 236K |
| 代理商： | MTSF2P02HD |
1
Motorola, Inc. 1997
Medium Power Surface Mount Products
Micro8
devices are an advanced series of power MOSFETs
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
devices are designed for use in low voltage,
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
ORDERING INFORMATION
AD
Device
Reel Size
13
″
Tape Width
12 mm embossed tape
Quantity
4000 units
MTSF2P02HDR2
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices
are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
Order this document
by MTSF2P02HD/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
SINGLE TMOS
POWER FET
3.0 AMPERES
20 VOLTS
RDS(on) = 0.090 OHM
Motorola Preferred Device
Source
Source
Source
Gate
1
2
3
4
8
7
6
5
Top View
Drain
Drain
Drain
Drain
CASE 846A–02, Style 1
Micro8
REV 6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTSF2P03HD | SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF3203 | SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTV10N100E | TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
| MTV20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM |
| MTV6N100E | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTSF2P03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM |
| MTSF2P03HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述: |
| MTSF3203 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM |
| MTSF3N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM |
| MTSF3N02HDR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 6.1A 8-Pin Micro T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。