參數(shù)資料
型號： MTSF1P02HD
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
中文描述： 1800 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 2/12頁
文件大?。?/td> 342K
代理商： MTSF1P02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)(1)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
(Cpk
≥
2.0)
(1) (3)
V(BR)DSS
20
—
—
12.8
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
8.0 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(2)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Threshold Temperature Coefficient (Negative)
(Cpk
≥
2.0)
(3)
VGS(th)
0.6
—
0.8
2.5
—
—
Vdc
mV/
°
C
Static Drain–to–Source On–Resistance
(VGS = 4.5 Vdc, ID = 1.8 Adc)
(VGS = 2.7 Vdc, ID = 0.9 Adc)
(3)
RDS(on)
—
—
120
160
160
190
m
Forward Transconductance (VDS = 10 Vdc, ID = 0.9 Adc)
(1)
gFS
2.0
4.0
—
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
f = 1.0 MHz)
Ciss
Coss
Crss
—
440
—
pF
Output Capacitance
(VDS = 10 Vdc, VGS = 0 Vdc,
—
300
—
Transfer Capacitance
—
150
—
SWITCHING CHARACTERISTICS(3)
Turn–On Delay Time
VGS = 4.5 Vdc, RG = 6.0
) (1)
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
15
—
ns
Rise Time
(VDS = 10 Vdc, ID = 1.8 Adc,
—
35
—
Turn–Off Delay Time
—
55
—
Fall Time
—
75
—
Turn–On Delay Time
VGS = 2.7 Vdc, RG = 6.0
) (1)
—
20
—
Rise Time
(VDD = 10 Vdc, ID = 0.9 Adc,
—
93
—
Turn–Off Delay Time
—
50
—
Fall Time
—
75
—
Gate Charge
VGS = 4.5 Vdc)
—
11
22
nC
(VDS = 10 Vdc, ID = 1.8 Adc,
—
0.7
—
—
5.5
—
—
3.8
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.8 Adc, VGS = 0 Vdc) (1)
(IS = 1.8 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.24
0.9
2.0
—
Vdc
Reverse Recovery Time
dIS/dt = 100 A/
μ
s) (1)
trr
ta
tb
—
120
—
ns
(IS = 1.8 Adc, VGS = 0 Vdc,
—
33
—
—
87
—
Reverse Recovery Stored Charge
QRR
—
0.223
—
μ
C
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk =
3 x SIGMA
Max limit – Typ
相關PDF資料
PDF描述
MTSF2P02HD SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM
MTSF2P03HD SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
MTSF3203 SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
MTV10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.240 OHM
相關代理商/技術參數(shù)
參數(shù)描述
MTSF2P02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHM
MTSF2P03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
MTSF2P03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 30V 4.1A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述:MOSFET Transistor, P-Channel, SO 制造商:ON Semiconductor 功能描述:MOSFET Transistor, P-Channel, SO 制造商:MOTOROLA 功能描述:
MTSF3203 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
MTSF3N02HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*