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參數(shù)資料
| 型號： | MTW7N80E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM |
| 中文描述： | 7 A, 800 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 220K |
| 代理商： | MTW7N80E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
0
4
8
12
16
20
14
8
2
6
10
14
18
4
6 V
7 V
VGS = 10 V
VDS
≥
10 V
2.0
2.8
3.6
4.4
5.2
2.4
3.2
4.0
4.8
10
14
8
4
0
TJ = –55
°
C
25
°
C
100
°
C
2
6
TJ = 25
°
C
VGS = 10 V
15 V
0.80
0.96
1.08
0.84
0
2
8
14
VGS = 0 V
0
300
700
1
1000
100000
200
500
10
25
°
C
100
°
C
TJ = 125
°
C
0
4
8
10
0.2
0.6
1.0
2.0
0.8
0.4
6
12
14
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 10 V
–50
0
0.4
0.8
1.6
2.4
–25
0
25
50
75
100
125
150
VGS = 10 V
ID = 3.5 A
5 V
10
6
2
10000
0.92
1.00
1.04
0.88
4
6
10
2.0
1.2
400
600
800
100
100
0
12
12
5.6
1.2
1.6
1.8
1.4
2
12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW8N50E | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: |
| MTW8N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
| MTW8N60E/D | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM |
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