參數(shù)資料
型號： MUN2237T1
廠商： 樂山無線電股份有限公司
英文描述： Bias Resistor Transistor
中文描述： 偏置電阻晶體管
文件頁數(shù)： 3/11頁
文件大?。?/td> 160K
代理商： MUN2237T1
LESHAN RADIO COMPANY, LTD.
MUN2211T1 Series–3/11
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
–
–
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
–
–
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.2
0.1
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
μ
A, I
E
= 0)
V
(BR)CBO
50
–
–
Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
–
–
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN2211T1
MUN2212T1
MUN2213T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2236T1
MUN2237T1
MUN2240T1
MUN2241T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
160
160
60
100
140
140
350
350
5.0
15
30
200
150
150
140
350
350
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN2230T1/MUN2231T1
(I
C
= 10 mA, I
B
= 1 mA) MUN2215T1/MUN2216T1/
MUN2232T1/MUN2233T1/MUN2234T1
V
CE(sat)
–
–
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MUN2211T1
MUN2212T1
MUN2214T1
MUN2215T1
MUN2216T1
MUN2230T1
MUN2231T1
MUN2232T1
MUN2233T1
MUN2234T1
MUN2213T1
MUN2240T1
MUN2236T1
MUN2237T1
MUN2241T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 5.0 V, R
L
= 1.0 k
)
4. Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
MUN2211T1 Series
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MUN2237T1G 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
MUN2238 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Digital Transistors (BRT) R1 = 2.2 k, R2 =  k
MUN2238T1G 制造商:ON Semiconductor 功能描述:NPN DIGITAL TRANSISTOR (B - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NPN DIGITAL TRANSISTOR (B
MUN2240 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:NPN Silicon Bias Resistor Transistor
MUN2240T1 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel
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