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參數(shù)資料
| 型號(hào)： | MURP810 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 8A, 1000V Ultrafast Diodes |
| 中文描述： | 8A條，1000V共超快二極管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 138K |
| 代理商： | MURP810 |
2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
MUR8100E, RURP8100
8A, 1000V Ultrafast Diodes
The MUR8100E and RUR8100 are ultrafast diodes
(t
rr
< 75ns) with soft recovery characteristics. They have a
low forward voltage drop and are of planar, silicon nitride
passivated, ion-implanted, epitaxial construction.
These devices are intended for use as energy steering/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and ultrafast recovery with soft recovery
characteristics minimize ringing and electrical noise in many
power switching circuits, thus reducing power loss in the
switching transistor.
Formerly developmental type TA09617.
Symbol
Features
Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . <75ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . .175
o
C
Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER
PACKAGE
BRAND
MUR8100E
TO-220AC
MU8100
RURP8100
TO-220AC
RURP8100
NOTE: When ordering, use entire part number.
K
A
CATHODE
(FLANGE)
CATHODE
ANODE
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
MUR8100E
RURP8100
UNITS
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 155
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave 20kHz)
1000
V
1000
V
1000
V
8
A
16
A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave 1 Phase 60Hz)
100
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
75
W
20
mJ
o
C
-55 to 175
Data Sheet
December 2002
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS105 | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A |
| MURS105-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
| MURS105T3 | 功能描述:整流器 50V 1A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS105T3G | 功能描述:整流器 50V 1A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS110 | 制造商:GULFSEMI 制造商全稱:Gulf Semiconductor 功能描述:ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A |
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