參數(shù)資料
型號： MURP810
廠商： Fairchild Semiconductor Corporation
英文描述： 8A, 1000V Ultrafast Diodes
中文描述： 8A條，1000V共超快二極管
文件頁數(shù)： 2/5頁
文件大小： 138K
代理商： MURP810
2002 Fairchild Semiconductor Corporation
MUR8100E, RURP8100 Rev. B1
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified.
SYMBOL
TEST CONDITION
MIN
TYP
MAX
UNITS
V
F
I
F
= 8A
-
-
1.8
V
I
F
= 8A, T
C
= 150
o
C
-
-
1.5
V
I
R
V
R
= 1000V
-
-
100
μ
A
V
R
= 1000V, T
C
= 150
o
C
-
-
500
μ
A
t
rr
I
F
= 1A
-
-
85
ns
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
-
100
ns
t
a
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
50
-
ns
t
b
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
30
-
ns
Q
RR
I
F
= 8A, dI
F
/dt = 200A/
μ
s
-
500
-
nC
C
J
V
R
= 10V, I
F
= 0A
-
30
-
pF
R
θ
JC
-
-
2.0
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
μ
s, D = 2%).
I
R
= Instantaneous reverse current.
t
rr
= Reverse recovery time at dI
F
/dt = 100A/
μ
s (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current at dI
F
/dt = 100A/
μ
s (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = Pulse width.
D = Duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
2
2.5
V
F
, FORWARD VOLTAGE (V)
I
F
,
1
40
0.5
10
0
0.5
1
1.5
25
o
C
100
o
C
175
o
C
3
V
R
, REVERSE VOLTAGE (V)
0
200
400
600
800
200
0.01
0.1
1
10
1000
0.001
25
o
C
100
o
C
175
o
C
I
R
,
μ
A
MUR8100E, RURP8100
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