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參數(shù)資料
| 型號(hào)： | MX0912B251Y |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 雙極晶體管 |
| 英文描述： | NPN microwave power transistor |
| 封裝： | MX0912B251Y<SOT439A (CDFM2)|<<http://www.nxp.com/packages/SOT439A.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大小： | 77K |
| 代理商： | MX0912B251Y |
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
FEATURES
Interdigitated structure; high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry gives good balance of dissipated
power and low thermal resistance
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration, and specified in class C.
PINNING - SOT439A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
olumns
e
c
b
MAM045
1
2
Top view
3
3
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common base class C broadband amplifier.
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
po
(dB)
η
C
(%)
Z
i
/Z
L
(
)
Class C
t
p
= 10
μ
s;
δ
= 10%
0.960 to 1.215
50
>235
>7
>42
see Figs 7 and 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MX0912B251Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B251Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B351Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MX0912B351Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MX0912B351Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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