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參數(shù)資料
| 型號(hào)： | MX25L1605DMI-12G |
| 廠商： | MACRONIX INTERNATIONAL CO LTD |
| 元件分類(lèi)： | PROM |
| 英文描述： | 8M X 2 FLASH 2.7V PROM, PDSO16 |
| 封裝： | 0.300 INCH, ROHS COMPLIANT, MS-013, SOP-16 |
| 文件頁(yè)數(shù)： | 40/56頁(yè) |
| 文件大?。?/td> | 3202K |
| 代理商： | MX25L1605DMI-12G |
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45
MX25L1605D
MX25L3205D
MX25L6405D
P/N: PM1290
REV. 1.5, APR. 29, 2009
ERASE AND PROGRAMMING PERFORMANCE
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-
mand.
4. Erase/Program cycles comply with JEDEC JESD-47E & A117A standard.
MIN.
MAX.
Input Voltage with respect to GND on ACC
-1.0V
10.5V
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
Current
-100mA
+100mA
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
LATCH-UP CHARACTERISTICS
PARAMETER
Min.
TYP. (1)
Max. (2)
UNIT
Write Status Register Cycle Time
40
100
ms
Sector Erase Cycle Time
60
300
ms
Block Erase Cycle Time
0.7
2
s
Chip Erase Cycle Time
64Mb
50
80
s
32Mb
25
50
s
16Mb
14
30
s
Chip Erase Cycle Time (at ACC mode)
64Mb
30
48
s
32Mb
15
30
s
16Mb
8
18
s
Byte Program Time (via page program command)
9
300
us
Page Program Cycle Time
1.4
5
ms
Page Program Cycle Time (at ACC mode)
1.4
5
ms
Erase/Program Cycle
100,000
cycles
Data Retention
PARAMETER
Condition
Min.
Max.
UNIT
Data retention
55C
20
years
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| MX25L1605DPI-12G | 制造商:MCNIX 制造商全稱(chēng):Macronix International 功能描述:16M-BIT [x 1 / x 2] CMOS SERIAL FLASH |
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