Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright
2002
MXP1125.PDF, 2002-05-01
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M
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MXP1125
Photovoltaic By-Pass Diode
50 Volts, 1.0 Amps
P
RODUCT
P
REVIEW
SANTA ANA DIVISION
DESCRIPTION
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
KEY FEATURES
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Anode and cathode contacts on
same side
Forward voltage decreases with
radiation exposure
Qualified for space applications
Thin construction for fit with
photovoltaic cells
APPLICATIONS/BENEFITS
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
Description
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc
≤
135
°
C
Junction Temperature Range
Storage Temperature Range
MAXIMUM RATINGS @ 25
°
C (UNLESS OTHERWISE SPECIFIED)
Symbol
V
RRM
V
RWM
V
R
I
F(ave)
T
j
T
stg
Max.
50
50
50
1.0
-65 to +150
-65 to +200
Unit
Volts
Volts
Volts
Amps
°
C
°
C
Description
Current (in dark)
Forward Voltage
pulse test, pw= 300
μ
s
Junction Capacitance
Breakdown Voltage
ELECTRICAL PARAMETERS
Symbol
IR
25
VR= 4 Vdc, Ta= 25
°
C
IR
25
VR= 50 Vdc, Ta= 25
°
C
VF1
IF= 1 A, Ta= 25
°
C
VF2
IF= 3.5 A, Ta= 25
°
C
Cj1
VR= 4 Vdc
BVR
IR= 200
μ
A, Ta= 25
°
C
Conditions
Min
50
Typ.
5
20
850
940
600
90
Max
200
1000
1000
1000
Unit
nA
nA
mV
mV
pF
V
Reverse (Leakage)
M
X
P
1
1
2
5