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參數(shù)資料
| 型號(hào)： | MZ0912B100Y |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 雙極晶體管 |
| 英文描述： | NPN microwave power transistors |
| 封裝： | MZ0912B100Y<SOT443A (CDFM2)|<<http://www.nxp.com/packages/SOT443A.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | MZ0912B100Y |
1997 Feb 20
4
Philips Semiconductors
Product specification
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
Notes
1.
2.
See “Mounting recommendations in the General part of handbook SC19a”
Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
Notes
1.
2.
Operating conditions and performance for other pulse formats can be made available on request.
V
CC
during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb
R
th mb-h
Z
th j
h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink T
j
= 125
°
C; note 1
thermal impedance from junction to heatsink
T
j
= 125
°
C
3.2
0.2
0.43
K/W
K/W
K/W
t
p
= 10
μ
s;
δ
= 10 %;
T
j
= 125
°
C; notes 1 and 2
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 65 V; I
E
= 0
V
CB
= 50 V; I
E
= 0
V
CB
= 60 V; R
BE
= 0
V
EB
= 1.5 V; I
C
= 0
40
4
40
400
mA
mA
mA
μ
A
I
CES
I
EBO
collector cut-off current
emitter cut-off current
MODE OF OPERATION
f
(GHz)
V
CC
(V)
(2)
P
L
(W)
≥
100
typ. 115
typ. 125
G
p
(dB)
≥
7
typ. 7.6
typ. 8
η
C
(%)
≥
42
typ. 44
typ. 50
Z
i
/Z
L
(
)
Class C;
t
p
= 10
μ
s;
δ
= 10%
t
p
= 300
μ
s;
δ
= 10%;
see Fig.6
0.960 to 1.215
50
see Figs 8 and 9
1.03 to 1.09
50
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| MZ0912B100Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MZ0912B100Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MZ0912B50Y | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MZ0912B50Y TRAY | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MZ0912B50Y,114 | 功能描述:兩極晶體管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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