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參數(shù)資料
| 型號： | NAND08GW3B2CZC1 |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 1G X 8 FLASH 3V PROM, 35 ns, PBGA63 |
| 封裝： | 9.50 X 12 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, LFBGA-63 |
| 文件頁數(shù)： | 1/59頁 |
| 文件大?。?/td> | 998K |
| 代理商： | NAND08GW3B2CZC1 |
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PRELIMINARY DATA
February 2005
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND512-B, NAND01G-B NAND02G-B
NAND04G-B NAND08G-B
512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 8 Gbit memory array
–
Up to 64Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (2048 + 64 spare) Bytes
–
x16 device: (1024 + 32 spare) Words
■
BLOCK SIZE
–
x8 device: (128K + 4K spare) Bytes
–
x16 device: (64K + 2K spare) Words
■
PAGE READ / PROGRAM
–
Random access: 25s (max)
–
Sequential access: 50ns (min)
–
Page program time: 300s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
CACHE PROGRAM AND CACHE READ
MODES
–
Internal Cache Register to improve the
program and read throughputs
■
FAST BLOCK ERASE
–
Block erase time: 2ms (typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’
–
for simple interface with microcontroller
■
AUTOMATIC PAGE 0 READ AT POWER-UP
–
Boot from NAND support
■
SERIAL NUMBER OPTION
Figure 1. Packages
■
DATA PROTECTION
–
Hardware and Software Block Locking
–
Hardware Program/Erase locked during
Power transitions
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
RoHS COMPLIANCE
–
Lead-Free Components are Compliant
with the RoHS Directive
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
PC Demo board with simulation software
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
LFBGA63 9.5 x 12 x 1.4mm
FBGA
USOP48 12 x 17 x 0.65mm
相關PDF資料 |
PDF描述 |
|---|---|
| NAND01GR3B3CZA1 | 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NAND02GR4B2BZB1 | 128M X 16 FLASH 1.8V PROM, 35 ns, PBGA63 |
| NCH030A3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
| NTHA3JAA3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
| NTHA3KC3-FREQ-OUT27 | CRYSTAL OSCILLATOR, CLOCK, 1 MHz - 4 MHz, HCMOS OUTPUT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NAND08GW3B4BN6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4BN6F | 制造商:Micron Technology Inc 功能描述:NAND - Tape and Reel |
| NAND08GW3B4CN1F | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3B4CZL6E | 制造商:Micron Technology Inc 功能描述:NAND - Trays |
| NAND08GW3C2AE01 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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