參數(shù)資料
型號(hào)： NAND128W4A0CV6T
廠商： 意法半導(dǎo)體
英文描述： 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
中文描述： 128兆，256兆，512兆位，1千兆位（x8/x16）528 Byte/264字的頁(yè)面，1.8V/3V，NAND閃存芯片
文件頁(yè)數(shù)： 20/57頁(yè)
文件大?。?/td> 410K
代理商： NAND128W4A0CV6T
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
20/57
DEVICE OPERATIONS
Pointer Operations
As the NAND Flash memories contain two differ-
ent areas for x16 devices and three different areas
for x8 devices (see
Figure 11.
) the read command
codes (00h, 01h, 50h) are used to act as pointers
to the different areas of the memory array (they se-
lect the most significant column address).
The Read A and Read B commands act as point-
ers to the main memory area. Their use depends
on the bus width of the device.
In x16 devices the Read A command (00h)
sets the pointer to Area A (the whole of the
main area) that is Words 0 to 255.
In x8 devices the Read A command (00h) sets
the pointer to Area A (the first half of the main
area) that is Bytes 0 to 255, and the Read B
command (01h) sets the pointer to Area B (the
■
■
second half of the main area) that is Bytes 256
to 511.
In both the x8 and x16 devices the Read C com-
mand (50h), acts as a pointer to Area C (the spare
memory area) that is Bytes 512 to 527 or Words
256 to 263.
Once the Read A and Read C commands have
been issued the pointer remains in the respective
areas until another pointer code is issued. Howev-
er, the Read B command is effective for only one
operation, once an operation has been executed
in Area B the pointer returns automatically to Area
A.
The pointer operations can also be used before a
program operation, that is the appropriate code
(00h, 01h or 50h) can be issued before the pro-
gram command 80h is issued (see
Figure 12.
).
Figure 11. Pointer Operations
AI07592
Area A
(00h)
A
Area B
(01h)
Area C
(50h)
Bytes 0- 255
Bytes 256-511
Bytes 512
-527
C
B
Pointer
(00h,01h,50h)
Page Buffer
Area A
(00h)
A
Area C
(50h)
Words 0- 255
Words 256
-263
C
Pointer
(00h,50h)
Page Buffer
x8 Devices
x16 Devices
相關(guān)PDF資料
PDF描述
NAND512R3A0BN6E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A0CZB6T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1F 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZA1T 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512R3A2BZB1E 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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NAND16GW3B6DPA6E 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
NAND16GW3B6DPA6F 功能描述:IC FLASH 16GBIT 114LFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040
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